jiangsu changjiang electronics technology co., ltd to-92mod plastic-encapsulate transistors 2SB560 transistor ( pnp ) features z high reverse voltage z low saturation voltage z suitable universal af power amplifier use maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.7 a p c collector power dissipation 900 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c = -10 ua, i e =0 -100 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma, i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -20 v , i e =0 -1 a collector cut-off current i ebo v eb = -4v , i b =0 -1 a h fe(1) v ce = -5v, i c = -50ma 60 560 dc current gain h fe(2) v ce = -5v, i c = -500ma 30 collector-emitter saturation voltage v ce(sat) i c =-500 ma, i b = -50ma -0.3 -0.8 v base-emitter saturation voltage v be(sat) i c =-500 ma, i b = -50ma -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma 100 mhz out capacitance cob v cb = -10 v ,f=1mh z 15 pf classification of h fe(1) rank d e f g range 60 - 120 100 - 200 160 - 320 280 - 560 to-92mod 1. emitter 2. collector 3. base j c ( t www.cj-elec.com 1 www.cj-elec.com c,mar,2016 a,jun,2011
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 4.800 5.000 0.189 0.197 a1 1.730 2.030 0.068 0.080 b 0.440 0.600 0.017 0.024 b1 0.940 1.100 0.037 0.043 c 0.350 0.450 0.014 0.018 d 5.900 6.100 0.232 0.240 d1 4.000 0.157 e 8.500 8.700 0.335 0.343 e 1.500 typ. 0.059 typ. e1 2.900 3.100 0.114 0.122 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.380 0.000 0.015 h www.cj-elec.com 2 a,jun,2014 www.cj-elec.com c,mar,2016
www.cj-elec.com 3 a,jun,2014 www.cj-elec.com c,mar,2016
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